2SD2103 silicon npn triple diffused application low frequency power amplifier outline to-220fm 2.2 k w
(typ) 1 2 3 1. base
2. collector
3. emitter 1 2 3
2SD2103 2 absolute maximum ratings (ta = 25c) item symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 7v collector current i c 8a collector peak current i c(peak) 12 a collector power dissipation p c 2w p c * 1 25 junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 60 v i c = 0.1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 60 v i c = 25 ma, r be = emitter to base breakdown voltage v (br)ebo 7vi e = 50 ma, i c = 0 collector cutoff current i cbo 10av cb = 50 v, i e = 0 i ceo 10 v ce = 50 v, r be = dc current transfer ratio h fe 1000 20000 v ce = 3 v, i c = 4 a* 1 collector to emitter saturation v ce(sat)1 1.5 v i c = 4 a, i b = 8 ma* 1 voltage i ce(sat)2 3.0 i c = 8 a, i b = 80 ma* 1 base to emitter saturation v be(sat)1 2.0 v i c = 4 a, i b = 8 ma* 1 voltage v be(sat)2 3.5 i c = 8 a, i b = 80 ma* 1 note: 1. pulse test. see switching characteristic curve of 2sd1572.
2SD2103 3 0 50 100 150 case temperature t c ( c) collector power dissipation pc (w) 10 30 20 maximum collector dissipation curve 0.03 0.1 0.3 1.0 30 3 10 collector to emitter voltage v ce (v) collector current i c (a) 0.3 1.0 3 10 30 100 300 area of safe operation 1 m s 100 m s pw = 10 ms dc operation
(t c = 25 c) i c (peak) i c (max) ta = 25 c
1 shot pulse collector to emitter voltage v ce (v) collector current i c (a) 0 typical output characteristics 12345 1 2 3 4 5 t c = 25 c
i b = 0 0.5 ma 1 5 2 3 1.5 2.5 100 200 500 1,000 2,000 5,000 10,000 collector current i c (a) dc current transfer ratio h fe 0.1 0.2 0.5 1.0 2 5 10 dc current transfer ratio
vs. collector current v ce = 3 v
t c = 75 c ?5 c 25 c
2SD2103 4 0.1 0.2 0.5 1.0 2 5 10 collector current i c (a) 0.1 0.2 0.5 1.0 2 5 10 collector to emitter saturation voltage v ce (sat) (v)
base to emitter saturation voltage v be (sat) (v) saturation voltage vs. collector current v be (sat) v ce (sat) t c = 25 c
l c /l b = 200 500 200 10 3 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 t c = 25 c thermal resistance q j-c ( c/w) transient thermal resistance time t (s)
2SD2103 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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